auf Bestellung 3000 Stücke:
Lieferzeit 115-119 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.56 EUR |
| 10+ | 3.8 EUR |
| 100+ | 3.01 EUR |
| 250+ | 2.78 EUR |
| 500+ | 2.52 EUR |
| 1000+ | 2.16 EUR |
| 3000+ | 2.04 EUR |
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Technische Details NTMJST2D6N08HTXG onsemi
Description: TRENCH 8 80V LFPAK 5X7, Packaging: Tape & Reel (TR), Package / Case: 10-PowerLSOP (0.209", 5.30mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 131.5A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V, Power Dissipation (Max): 5.3W (Ta), 116W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 10-TCPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4405 pF @ 40 V.
Weitere Produktangebote NTMJST2D6N08HTXG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTMJST2D6N08HTXG | Hersteller : onsemi |
 Description: TRENCH 8 80V LFPAK 5X7Packaging: Tape & Reel (TR) Package / Case: 10-PowerLSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 131.5A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 5.3W (Ta), 116W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 10-TCPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4405 pF @ 40 V |
Produkt ist nicht verfügbar |
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NTMJST2D6N08HTXG | Hersteller : onsemi |
Description: TRENCH 8 80V LFPAK 5X7 Packaging: Cut Tape (CT) Package / Case: 10-PowerLSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 131.5A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 5.3W (Ta), 116W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 10-TCPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4405 pF @ 40 V |
Produkt ist nicht verfügbar |