auf Bestellung 3000 Stücke:
Lieferzeit 108-112 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.01 EUR |
10+ | 3.33 EUR |
100+ | 2.66 EUR |
250+ | 2.45 EUR |
500+ | 2.22 EUR |
1000+ | 1.9 EUR |
3000+ | 1.8 EUR |
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Technische Details NTMJST1D4N06CLTXG onsemi
Description: TRENCH 6 60V LFPAK 5X7, Packaging: Tape & Reel (TR), Package / Case: 10-PowerLSOP (0.209", 5.30mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 198A (Tc), Rds On (Max) @ Id, Vgs: 1.49mOhm @ 50A, 10V, Power Dissipation (Max): 5.3W (Ta), 116W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 10-TCPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 92.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 25 V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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NTMJST1D4N06CLTXG | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-PowerLSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 198A (Tc) Rds On (Max) @ Id, Vgs: 1.49mOhm @ 50A, 10V Power Dissipation (Max): 5.3W (Ta), 116W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 10-TCPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 92.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 25 V |
Produkt ist nicht verfügbar |
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NTMJST1D4N06CLTXG | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 10-PowerLSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 198A (Tc) Rds On (Max) @ Id, Vgs: 1.49mOhm @ 50A, 10V Power Dissipation (Max): 5.3W (Ta), 116W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 10-TCPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 92.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 25 V |
Produkt ist nicht verfügbar |