NTMFSC011N08M7 onsemi
Hersteller: onsemi
Description: MV7 80V SG 10MOHM PQFN56DC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 78.1W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 120µA
Supplier Device Package: 8-DFN (5x6.15)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
Description: MV7 80V SG 10MOHM PQFN56DC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 78.1W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 120µA
Supplier Device Package: 8-DFN (5x6.15)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.04 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTMFSC011N08M7 onsemi
Description: MV7 80V SG 10MOHM PQFN56DC, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 61A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V, Power Dissipation (Max): 3.3W (Ta), 78.1W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 120µA, Supplier Device Package: 8-DFN (5x6.15), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V.
Weitere Produktangebote NTMFSC011N08M7 nach Preis ab 1.11 EUR bis 2.52 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NTMFSC011N08M7 | Hersteller : onsemi |
Description: MV7 80V SG 10MOHM PQFN56DC Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V Power Dissipation (Max): 3.3W (Ta), 78.1W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 120µA Supplier Device Package: 8-DFN (5x6.15) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
NTMFSC011N08M7 | Hersteller : ON Semiconductor | N-Channel Dual Power Trench MOSFET |
Produkt ist nicht verfügbar |
||||||||||||||
NTMFSC011N08M7 | Hersteller : onsemi | MOSFET N-Channel Dual CoolTM 56 PowerTrench MOSFET 80V, 61A, 10mohm N-Channel Dual CoolTM 56 PowerTrench MOSFET 80V, 61A, 10mohm |
Produkt ist nicht verfügbar |