auf Bestellung 10141 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.46 EUR |
10+ | 2.06 EUR |
100+ | 1.63 EUR |
250+ | 1.56 EUR |
500+ | 1.37 EUR |
1000+ | 1.2 EUR |
1500+ | 1.13 EUR |
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Technische Details NTMFS5C673NT1G onsemi
Description: MOSFET N-CH 60V 14A/50A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 10.7mOhm @ 7A, 10V, Power Dissipation (Max): 3.6W (Ta), 46W (Tc), Vgs(th) (Max) @ Id: 4V @ 35µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 30 V.
Weitere Produktangebote NTMFS5C673NT1G nach Preis ab 1.4 EUR bis 2.52 EUR
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NTMFS5C673NT1G | Hersteller : onsemi |
Description: MOSFET N-CH 60V 14A/50A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 10.7mOhm @ 7A, 10V Power Dissipation (Max): 3.6W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 4V @ 35µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 30 V |
auf Bestellung 809 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS5C673NT1G | Hersteller : ON Semiconductor | Single N Channel Power MOSFET 60V, 50A, 10.7m |
Produkt ist nicht verfügbar |
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NTMFS5C673NT1G | Hersteller : onsemi |
Description: MOSFET N-CH 60V 14A/50A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 10.7mOhm @ 7A, 10V Power Dissipation (Max): 3.6W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 4V @ 35µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 30 V |
Produkt ist nicht verfügbar |