NTMFS4C09NBT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V SO8FL
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 760mW (Ta), 25.5W (Tc)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
Package / Case: 8-PowerTDFN, 5 Leads
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 4.5 V
Description: MOSFET N-CH 30V SO8FL
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 760mW (Ta), 25.5W (Tc)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
Package / Case: 8-PowerTDFN, 5 Leads
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 4.5 V
auf Bestellung 1436 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 1.65 EUR |
| 13+ | 1.36 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.89 EUR |
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Technische Details NTMFS4C09NBT1G onsemi
Description: MOSFET N-CH 30V SO8FL, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Power Dissipation (Max): 760mW (Ta), 25.5W (Tc), Part Status: Active, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V, Package / Case: 8-PowerTDFN, 5 Leads, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 4.5 V.
Weitere Produktangebote NTMFS4C09NBT1G nach Preis ab 0.76 EUR bis 1.67 EUR
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NTMFS4C09NBT1G | Hersteller : onsemi |
 MOSFET NFET SO8FL 30V 52A 5.8MOH |
auf Bestellung 1412 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTMFS4C09NBT1G | Hersteller : ON Semiconductor |
auf Bestellung 8660 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTMFS4C09NBT1G | Hersteller : ON Semiconductor |
NFET SO8FL 30V 52A 5.8M Ohm |
Produkt ist nicht verfügbar |
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| NTMFS4C09NBT1G | Hersteller : ON Semiconductor | NFET SO8FL 30V 52A 5.8M Ohm |
Produkt ist nicht verfügbar |
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NTMFS4C09NBT1G | Hersteller : onsemi |
Description: MOSFET N-CH 30V SO8FL Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Power Dissipation (Max): 760mW (Ta), 25.5W (Tc) Part Status: Active Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V Package / Case: 8-PowerTDFN, 5 Leads Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 4.5 V |
Produkt ist nicht verfügbar |