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NTMFS4931NT1G-IRH1

NTMFS4931NT1G-IRH1 onsemi

ntmfs4931n-d.pdf Hersteller: onsemi
Description: NTMFS4931 - MOSFET N CHANNEL SIN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V
auf Bestellung 5197 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
283+1.72 EUR
Mindestbestellmenge: 283
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Technische Details NTMFS4931NT1G-IRH1 onsemi

Description: NTMFS4931NT1G-IRH1, Packaging: Bulk, Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 246A (Tc), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V, Power Dissipation (Max): 950mW (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V.

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NTMFS4931NT1G-IRH1 NTMFS4931NT1G-IRH1 Hersteller : ONSEMI ntmfs4931n-d.pdf Description: ONSEMI - NTMFS4931NT1G-IRH1 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 5197 Stücke:
Lieferzeit 14-21 Tag (e)
NTMFS4931NT1G-IRH1 NTMFS4931NT1G-IRH1 Hersteller : onsemi ntmfs4931n-d.pdf Description: NTMFS4931NT1G-IRH1
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 246A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 950mW (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V
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