NTH4LN095N65S3H onsemi
Hersteller: onsemiMOSFETs Power MOSFET, N-Channel, SUPERFET III, FAST, 650 V, 30 A, 95 mohm, TO-247 narrow 4lead
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 14.34 EUR |
| 10+ | 12.97 EUR |
| 25+ | 11.84 EUR |
| 100+ | 11.28 EUR |
| 250+ | 10.72 EUR |
| 450+ | 8.69 EUR |
| 900+ | 8.55 EUR |
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Technische Details NTH4LN095N65S3H onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.8mA, Supplier Device Package: TO-247-4, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V.
Weitere Produktangebote NTH4LN095N65S3H
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTH4LN095N65S3H | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 30A Tube |
Produkt ist nicht verfügbar |
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NTH4LN095N65S3H | Hersteller : onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFE Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.8mA Supplier Device Package: TO-247-4 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V |
Produkt ist nicht verfügbar |