![NTE2375 NTE2375](https://media.digikey.com/Photos/NTE-Electronics/MFG_NTE2375.jpg)
NTE2375 NTE Electronics, Inc
![nte2375.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CHANNEL 100V 41A TO247
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
auf Bestellung 215 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 18.32 EUR |
10+ | 17.41 EUR |
20+ | 16.49 EUR |
50+ | 15.58 EUR |
100+ | 15.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTE2375 NTE Electronics, Inc
Description: MOSFET N-CHANNEL 100V 41A TO247, Packaging: Bag, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V.
Weitere Produktangebote NTE2375
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
NTE2375 | Hersteller : NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 120A; 230W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 29A Pulsed drain current: 120A Power dissipation: 230W Case: TO247 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: THT Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
NTE2375 | Hersteller : NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 120A; 230W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 29A Pulsed drain current: 120A Power dissipation: 230W Case: TO247 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |