NTE2370 NTE Electronics, Inc
Hersteller: NTE Electronics, IncDescription: T-PNP SI DIGITAL 4.7K/47K
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: TO-92S
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 484 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 1.83 EUR |
| 20+ | 1.72 EUR |
| 50+ | 1.64 EUR |
| 100+ | 1.58 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTE2370 NTE Electronics, Inc
Description: T-PNP SI DIGITAL 4.7K/47K, Packaging: Bag, Package / Case: TO-226-3, TO-92-3 Short Body, Mounting Type: Through Hole, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: TO-92S, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms.
Weitere Produktangebote NTE2370 nach Preis ab 1.93 EUR bis 5.11 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NTE2370 | Hersteller : NTE Electronics |
NTE2370 PNP THT transistors |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
|