NTE159M NTE Electronics, Inc
Hersteller: NTE Electronics, Inc
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bag
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.8 W
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bag
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.8 W
auf Bestellung 302 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
9+ | 2.11 EUR |
10+ | 2.01 EUR |
20+ | 1.90 EUR |
50+ | 1.80 EUR |
100+ | 1.76 EUR |
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Technische Details NTE159M NTE Electronics, Inc
Description: TRANS PNP 60V 0.6A TO18, Packaging: Bag, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Frequency - Transition: 200MHz, Supplier Device Package: TO-18, Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.8 W.
Weitere Produktangebote NTE159M nach Preis ab 1.47 EUR bis 2.26 EUR
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NTE159M | Hersteller : NTE Electronics |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.8W; TO18 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 1.8W Case: TO18 Current gain: 50...300 Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 92 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE159M | Hersteller : NTE Electronics |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.8W; TO18 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 1.8W Case: TO18 Current gain: 50...300 Mounting: THT |
auf Bestellung 92 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE159M | Hersteller : NTE Electronics, Inc. | Silicon Complementary RF Transistors General Purpose |
Produkt ist nicht verfügbar |