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NTD5C632NLT4G

NTD5C632NLT4G onsemi

ntd5c632nl-d.pdf Hersteller: onsemi
Description: T6 60V LL DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 155A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
auf Bestellung 2258 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.4 EUR
10+ 2.82 EUR
100+ 2.24 EUR
500+ 1.9 EUR
1000+ 1.61 EUR
Mindestbestellmenge: 6
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Technische Details NTD5C632NLT4G onsemi

Description: T6 60V LL DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 155A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V, Power Dissipation (Max): 4W (Ta), 115W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V.

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NTD5C632NLT4G NTD5C632NLT4G Hersteller : onsemi ntd5c632nl-d.pdf Description: T6 60V LL DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 155A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
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