NTD4865N-35G onsemi
Hersteller: onsemiDescription: MOSFET N-CH 25V 8.5A/44A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.27W (Ta), 33.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 12 V
auf Bestellung 12975 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2049+ | 0.24 EUR |
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Technische Details NTD4865N-35G onsemi
Description: MOSFET N-CH 25V 8.5A/44A IPAK, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 44A (Tc), Rds On (Max) @ Id, Vgs: 10.9mOhm @ 30A, 10V, Power Dissipation (Max): 1.27W (Ta), 33.3W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: IPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 12 V.
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NTD4865N-35G | Hersteller : ONSEMI |
Description: ONSEMI - NTD4865N-35G - NTD4865N-35G, SINGLE MOSFETS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 12975 Stücke: Lieferzeit 14-21 Tag (e) |