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NSVT3946DXV6T1G

NSVT3946DXV6T1G onsemi

NST3946DXV6T1_D-2318403.pdf Hersteller: onsemi
Bipolar Transistors - BJT SS SOT563 XSTR DUAL 40V
auf Bestellung 3490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.64 EUR
10+ 0.49 EUR
100+ 0.27 EUR
1000+ 0.17 EUR
8000+ 0.15 EUR
24000+ 0.14 EUR
Mindestbestellmenge: 5
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Technische Details NSVT3946DXV6T1G onsemi

Description: TRANS NPN/PNP 40V 0.2A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: NPN, PNP, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 500mW, Current - Collector (Ic) (Max): 200mA, Voltage - Collector Emitter Breakdown (Max): 40V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V, Frequency - Transition: 300MHz, 250MHz, Supplier Device Package: SOT-563.

Weitere Produktangebote NSVT3946DXV6T1G nach Preis ab 0.17 EUR bis 0.79 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NSVT3946DXV6T1G NSVT3946DXV6T1G Hersteller : onsemi nst3946dxv6t1-d.pdf Description: TRANS NPN/PNP 40V 0.2A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz, 250MHz
Supplier Device Package: SOT-563
auf Bestellung 3370 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.79 EUR
32+ 0.55 EUR
100+ 0.28 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 23
NSVT3946DXV6T1G NSVT3946DXV6T1G Hersteller : onsemi nst3946dxv6t1-d.pdf Description: TRANS NPN/PNP 40V 0.2A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz, 250MHz
Supplier Device Package: SOT-563
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