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NSVS50031SB3T1G

NSVS50031SB3T1G onsemi

NSVS50030SB3_D-2318641.pdf Hersteller: onsemi
Bipolar Transistors - BJT Bipolar Trans 50V 3A Low VCE
auf Bestellung 26681 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.05 EUR
10+ 0.91 EUR
100+ 0.63 EUR
500+ 0.53 EUR
1000+ 0.41 EUR
3000+ 0.36 EUR
Mindestbestellmenge: 3
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Technische Details NSVS50031SB3T1G onsemi

Description: TRANS NPN 50V 3A 3CPH, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 175°C (TJ), Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V, Frequency - Transition: 380MHz, Supplier Device Package: 3-CPH, Part Status: Active, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1.1 W.

Weitere Produktangebote NSVS50031SB3T1G nach Preis ab 0.46 EUR bis 1.07 EUR

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NSVS50031SB3T1G NSVS50031SB3T1G Hersteller : onsemi nsvs50030sb3-d.pdf Description: TRANS NPN 50V 3A 3CPH
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 3-CPH
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.1 W
auf Bestellung 1835 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.07 EUR
19+ 0.93 EUR
100+ 0.64 EUR
500+ 0.54 EUR
1000+ 0.46 EUR
Mindestbestellmenge: 17
NSVS50031SB3T1G Hersteller : ON Semiconductor nsvs50030sb3-d.pdf NPN Bipolar GP BJT Transistor
Produkt ist nicht verfügbar
NSVS50031SB3T1G NSVS50031SB3T1G Hersteller : onsemi nsvs50030sb3-d.pdf Description: TRANS NPN 50V 3A 3CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 3-CPH
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.1 W
Produkt ist nicht verfügbar