Produkte > ON SEMICONDUCTOR > NSVMUN5113DW1T3G
NSVMUN5113DW1T3G

NSVMUN5113DW1T3G ON Semiconductor


dta144ed-d.pdf Hersteller: ON Semiconductor
Dual PNP Bias Resistor Transistors
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details NSVMUN5113DW1T3G ON Semiconductor

Description: TRANS PNP 50V DUAL BIPO SC88-3, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V, Resistor - Base (R1): 47kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363.

Weitere Produktangebote NSVMUN5113DW1T3G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NSVMUN5113DW1T3G NSVMUN5113DW1T3G Hersteller : onsemi dta144ed-d.pdf Description: TRANS PNP 50V DUAL BIPO SC88-3
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Produkt ist nicht verfügbar
NSVMUN5113DW1T3G NSVMUN5113DW1T3G Hersteller : onsemi dta144ed-d.pdf Description: TRANS PNP 50V DUAL BIPO SC88-3
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Produkt ist nicht verfügbar
NSVMUN5113DW1T3G Hersteller : onsemi DTA144ED_D-2310855.pdf Bipolar Transistors - Pre-Biased SS SC88 BR XSTR PNP 50V
Produkt ist nicht verfügbar