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NSVMSD1819A-RT1G

NSVMSD1819A-RT1G onsemi


MSD1819A_RT1_D-2316337.pdf Hersteller: onsemi
Bipolar Transistors - BJT NPN Bipolar Transistor
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+0.43 EUR
10+ 0.36 EUR
100+ 0.17 EUR
1000+ 0.084 EUR
3000+ 0.077 EUR
9000+ 0.058 EUR
24000+ 0.053 EUR
Mindestbestellmenge: 7
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Technische Details NSVMSD1819A-RT1G onsemi

Description: TRANS NPN 50V 0.1A SC70-3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V, Supplier Device Package: SC-70-3 (SOT323), Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Qualification: AEC-Q101.

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NSVMSD1819A-RT1G NSVMSD1819A-RT1G Hersteller : onsemi msd1819a-rt1-d.pdf Description: TRANS NPN 50V 0.1A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
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