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NSVMMUN2230LT1G

NSVMMUN2230LT1G onsemi

dtc113e-d.pdf Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.087 EUR
6000+ 0.081 EUR
9000+ 0.067 EUR
Mindestbestellmenge: 3000
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Technische Details NSVMMUN2230LT1G onsemi

Description: TRANS PREBIAS NPN 50V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V, Supplier Device Package: SOT-23-3 (TO-236), Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 246 mW, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NSVMMUN2230LT1G nach Preis ab 0.062 EUR bis 0.53 EUR

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NSVMMUN2230LT1G NSVMMUN2230LT1G Hersteller : onsemi DTC113E_D-2310891.pdf Digital Transistors NPN Bipolar Digital Transistor (BRT)
auf Bestellung 8997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+0.52 EUR
10+ 0.39 EUR
100+ 0.15 EUR
1000+ 0.1 EUR
3000+ 0.079 EUR
9000+ 0.065 EUR
24000+ 0.062 EUR
Mindestbestellmenge: 6
NSVMMUN2230LT1G NSVMMUN2230LT1G Hersteller : onsemi dtc113e-d.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
34+0.53 EUR
50+ 0.36 EUR
102+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.1 EUR
Mindestbestellmenge: 34