auf Bestellung 19131 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 0.51 EUR |
10+ | 0.35 EUR |
100+ | 0.22 EUR |
1000+ | 0.1 EUR |
2500+ | 0.086 EUR |
10000+ | 0.065 EUR |
20000+ | 0.062 EUR |
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Technische Details NSVMMUN2114LT3G onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 246 mW, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms, Qualification: AEC-Q101.
Weitere Produktangebote NSVMMUN2114LT3G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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NSVMMUN2114LT3G | Hersteller : ON Semiconductor | NPN Transistors with Monolithic Bias Resistor Network |
Produkt ist nicht verfügbar |
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NSVMMUN2114LT3G | Hersteller : onsemi |
Description: TRANS PREBIAS PNP 50V SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |