NSBA114YDXV6T1G onsemi
Hersteller: onsemiDescription: TRANS PREBIAS 2PNP 50V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4000+ | 0.2 EUR |
| 8000+ | 0.19 EUR |
| 12000+ | 0.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NSBA114YDXV6T1G onsemi
Description: TRANS PREBIAS 2PNP 50V SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 500mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SOT-563, Part Status: Active.
Weitere Produktangebote NSBA114YDXV6T1G nach Preis ab 0.095 EUR bis 0.9 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NSBA114YDXV6T1G | Hersteller : onsemi |
Digital Transistors 100mA 50V Dual PNP |
auf Bestellung 1167 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
NSBA114YDXV6T1G | Hersteller : onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Part Status: Active |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| NSBA114YDXV6T1G | Hersteller : ON Semiconductor |
|
auf Bestellung 7990 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
| NSBA114YDXV6T1G | Hersteller : ONSEMI |
Description: ONSEMI - NSBA114YDXV6T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 235650 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
 |
NSBA114YDXV6T1G | Hersteller : ON Semiconductor |
Trans Digital BJT PNP 50V 100mA 500mW 6-Pin SOT-563 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
NSBA114YDXV6T1G | Hersteller : ON Semiconductor |
Trans Digital BJT PNP 50V 100mA 500mW 6-Pin SOT-563 T/R |
Produkt ist nicht verfügbar |