Technische Details NRVBB4030T4G onsemi
Description: DIODE SCHOTTKY 30V 40A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 40A, Supplier Device Package: D2PAK, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A, Current - Reverse Leakage @ Vr: 350 µA @ 30 V.
Weitere Produktangebote NRVBB4030T4G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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NRVBB4030T4G | Hersteller : ON Semiconductor |
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auf Bestellung 1550 Stücke: Lieferzeit 21-28 Tag (e) |
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NRVBB4030T4G | Hersteller : ONSEMI |
![]() Description: Diode: Schottky rectifying; SMD; 30V; 40A; D2PAK; reel,tape Mounting: SMD Case: D2PAK Application: automotive industry Max. forward voltage: 0.55V Max. load current: 80A Max. off-state voltage: 30V Kind of package: reel; tape Type of diode: Schottky rectifying Load current: 40A Semiconductor structure: single diode Max. forward impulse current: 300A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NRVBB4030T4G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 40A Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A Current - Reverse Leakage @ Vr: 350 µA @ 30 V |
Produkt ist nicht verfügbar |
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NRVBB4030T4G | Hersteller : ONSEMI |
![]() Description: Diode: Schottky rectifying; SMD; 30V; 40A; D2PAK; reel,tape Mounting: SMD Case: D2PAK Application: automotive industry Max. forward voltage: 0.55V Max. load current: 80A Max. off-state voltage: 30V Kind of package: reel; tape Type of diode: Schottky rectifying Load current: 40A Semiconductor structure: single diode Max. forward impulse current: 300A |
Produkt ist nicht verfügbar |