NP60N06PDK-E1-AY Renesas Electronics Corporation

Description: MOSFET TRANSISTOR MORE 1 W, Packaging: Tape & Reel (TR), Part Status: Active, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A, Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V, Power Dissipation (Max): 105W, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.