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NP36P04SDG-E1-AY

NP36P04SDG-E1-AY Renesas Electronics Corporation

np36p04sdg-datasheet Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 36A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.26 EUR
5000+ 1.21 EUR
Mindestbestellmenge: 2500
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Technische Details NP36P04SDG-E1-AY Renesas Electronics Corporation

Description: MOSFET P-CH 40V 36A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V, Power Dissipation (Max): 1.2W (Ta), 56W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (MP-3ZK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V.

Weitere Produktangebote NP36P04SDG-E1-AY nach Preis ab 1.29 EUR bis 2.82 EUR

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NP36P04SDG-E1-AY NP36P04SDG-E1-AY Hersteller : Renesas Electronics Corporation np36p04sdg-datasheet Description: MOSFET P-CH 40V 36A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
auf Bestellung 10833 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.8 EUR
10+ 2.32 EUR
100+ 1.84 EUR
500+ 1.56 EUR
1000+ 1.32 EUR
Mindestbestellmenge: 7
NP36P04SDG-E1-AY NP36P04SDG-E1-AY Hersteller : Renesas Electronics r07ds1519ej0100_np36p04sdg-3075870.pdf MOSFET MP-3ZK PoTr-MOSFET Low
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+2.82 EUR
10+ 2.43 EUR
100+ 1.95 EUR
250+ 1.87 EUR
500+ 1.61 EUR
1000+ 1.36 EUR
2500+ 1.29 EUR
NP36P04SDG-E1-AY Hersteller : Renesas np36p04sdg-datasheet to-252/SWITCHING P-CHANNEL POWER MOSFET POWERMOSFET
Anzahl je Verpackung: 2500 Stücke
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