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NP36P04KDG-E1-AY

NP36P04KDG-E1-AY Renesas Electronics Corporation

D18686EJ3V0DS00.pdf Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 36A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+2.08 EUR
1600+ 1.77 EUR
2400+ 1.68 EUR
Mindestbestellmenge: 800
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Technische Details NP36P04KDG-E1-AY Renesas Electronics Corporation

Description: MOSFET P-CH 40V 36A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V, Power Dissipation (Max): 1.8W (Ta), 56W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-263, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V.

Weitere Produktangebote NP36P04KDG-E1-AY nach Preis ab 1.62 EUR bis 3.73 EUR

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NP36P04KDG-E1-AY NP36P04KDG-E1-AY Hersteller : Renesas Electronics r07ds1523ej0100_np36p04kdg-3076145.pdf MOSFET LOW VOLTAGE POWER MOSFET
auf Bestellung 1600 Stücke:
Lieferzeit 136-140 Tag (e)
Anzahl Preis ohne MwSt
1+3.71 EUR
10+ 3.2 EUR
100+ 2.57 EUR
250+ 2.46 EUR
500+ 2.13 EUR
800+ 1.69 EUR
4800+ 1.62 EUR
NP36P04KDG-E1-AY NP36P04KDG-E1-AY Hersteller : Renesas Electronics Corporation D18686EJ3V0DS00.pdf Description: MOSFET P-CH 40V 36A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
auf Bestellung 3988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.73 EUR
10+ 3.1 EUR
100+ 2.46 EUR
Mindestbestellmenge: 5
NP36P04KDG-E1-AY Hersteller : Renesas D18686EJ3V0DS00.pdf TO263AB/36 A, 40 V, 0.0235 ohm, P-CHANNEL, Si, POWER, MOSFET NP36P04
Anzahl je Verpackung: 800 Stücke
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