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NP32N055SLE-E1-AY

NP32N055SLE-E1-AY Renesas


1796530810600729d14137ej5v0ds00.pdf Hersteller: Renesas
Trans MOSFET N-CH 55V 32A Automotive 3-Pin(2+Tab) DPAK T/R
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Technische Details NP32N055SLE-E1-AY Renesas

Description: MOSFET N-CH 55V 32A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V, Power Dissipation (Max): 1.2W (Ta), 66W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (MP-3ZK), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V.

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NP32N055SLE-E1-AY Hersteller : Renesas np32n055hlenp32n055ilenp32n055sle-data-sheet?language=en&r=499516 TO252/N-CHANNEL POWER MOSFET POWERMOSFET
Anzahl je Verpackung: 2500 Stücke
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NP32N055SLE-E1-AY NP32N055SLE-E1-AY Hersteller : Renesas Electronics Corporation np32n055hlenp32n055ilenp32n055sle-data-sheet?language=en&r=499516 Description: MOSFET N-CH 55V 32A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Power Dissipation (Max): 1.2W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
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NP32N055SLE-E1-AY Hersteller : Renesas Electronics renesas_electronics_rnccs04272-1-1747725.pdf MOSFET 1P-3ZK PoTr-MOSFET Low
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