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NJVNJD2873T4G

NJVNJD2873T4G onsemi

NJD2873T4_D-2318221.pdf Hersteller: onsemi
Bipolar Transistors - BJT 2.0 A, 50 V NPN Bipolar Power Transistor
auf Bestellung 15691 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.92 EUR
10+ 0.82 EUR
100+ 0.7 EUR
500+ 0.52 EUR
1000+ 0.48 EUR
2500+ 0.43 EUR
Mindestbestellmenge: 4
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Technische Details NJVNJD2873T4G onsemi

Description: TRANS NPN 50V 2A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 175°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V, Frequency - Transition: 65MHz, Supplier Device Package: DPAK, Part Status: Active, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1.68 W.

Weitere Produktangebote NJVNJD2873T4G nach Preis ab 0.59 EUR bis 1.41 EUR

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Preis ohne MwSt
NJVNJD2873T4G NJVNJD2873T4G Hersteller : onsemi njd2873t4-d.pdf Description: TRANS NPN 50V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.68 W
auf Bestellung 2416 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.41 EUR
15+ 1.22 EUR
100+ 0.94 EUR
500+ 0.74 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 13
NJVNJD2873T4G NJVNJD2873T4G Hersteller : onsemi njd2873t4-d.pdf Description: TRANS NPN 50V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.68 W
auf Bestellung 1140 Stücke:
Lieferzeit 10-14 Tag (e)
NJVNJD2873T4G NJVNJD2873T4G Hersteller : ON Semiconductor njd2873t4-d.pdf Trans GP BJT NPN 50V 2A 1680mW Automotive 3-Pin(2+Tab) DPAK T/R
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
NJVNJD2873T4G Hersteller : ONSEMI njd2873t4-d.pdf NJVNJD2873T4G NPN SMD transistors
auf Bestellung 2499 Stücke:
Lieferzeit 7-14 Tag (e)