Technische Details NJL4281DG
Description: TRANS NPN 350V 15A TO264, Packaging: Tube, Package / Case: TO-264-5, Mounting Type: Through Hole, Transistor Type: NPN + Diode (Isolated), Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 8A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V, Frequency - Transition: 35MHz, Supplier Device Package: TO-264, Part Status: Obsolete, Current - Collector (Ic) (Max): 15 A, Voltage - Collector Emitter Breakdown (Max): 350 V, Power - Max: 230 W.
Weitere Produktangebote NJL4281DG
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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NJL4281DG | Hersteller : ONSEMI |
Description: ONSEMI - NJL4281DG - NJL4281DG, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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NJL4281DG | Hersteller : ON Semiconductor | Trans GP BJT NPN 350V 15A 230000mW 5-Pin(5+Tab) TO-264 Tube |
Produkt ist nicht verfügbar |
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NJL4281DG | Hersteller : onsemi |
Description: TRANS NPN 350V 15A TO264 Packaging: Tube Package / Case: TO-264-5 Mounting Type: Through Hole Transistor Type: NPN + Diode (Isolated) Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 8A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V Frequency - Transition: 35MHz Supplier Device Package: TO-264 Part Status: Obsolete Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 230 W |
Produkt ist nicht verfügbar |
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NJL4281DG | Hersteller : onsemi | Bipolar Transistors - BJT NPN BIPPWR THERM TRAK |
Produkt ist nicht verfügbar |