NGTB50N65FL2WG onsemi
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 94 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 100ns/237ns
Switching Energy: 1.5mJ (on), 460µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 220 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 417 W
Description: IGBT TRENCH FS 650V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 94 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 100ns/237ns
Switching Energy: 1.5mJ (on), 460µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 220 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 417 W
auf Bestellung 68 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.58 EUR |
30+ | 8.44 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NGTB50N65FL2WG onsemi
Description: IGBT TRENCH FS 650V 100A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 94 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 100ns/237ns, Switching Energy: 1.5mJ (on), 460µJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 220 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 417 W.
Weitere Produktangebote NGTB50N65FL2WG nach Preis ab 5.77 EUR bis 10.65 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NGTB50N65FL2WG | Hersteller : onsemi | IGBT Transistors 600V/50A FAST IGBT FSII T |
auf Bestellung 306 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
NGTB50N65FL2WG | Hersteller : ON Semiconductor |
auf Bestellung 196 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||||
NGTB50N65FL2WG | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 650V 100A 417000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||||||||||||||||||
NGTB50N65FL2WG | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 650V 100A 417W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |