NGTB50N60S1WG onsemi
Hersteller: onsemi
Description: IGBT 50A 600V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 94 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 100ns/237ns
Switching Energy: 1.5mJ (on), 460µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 220 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 417 W
Description: IGBT 50A 600V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 94 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 100ns/237ns
Switching Energy: 1.5mJ (on), 460µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 220 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 417 W
auf Bestellung 1080 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
93+ | 5.3 EUR |
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Technische Details NGTB50N60S1WG onsemi
Description: IGBT 50A 600V TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 94 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A, Supplier Device Package: TO-247-3, IGBT Type: Trench, Td (on/off) @ 25°C: 100ns/237ns, Switching Energy: 1.5mJ (on), 460µJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 220 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 417 W.
Weitere Produktangebote NGTB50N60S1WG
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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NGTB50N60S1WG | Hersteller : ONSEMI |
Description: ONSEMI - NGTB50N60S1WG - IGBT, SINGLE, 600V, 100A, TO-247-3 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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NGTB50N60S1WG | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 600V 100A 417000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NGTB50N60S1WG | Hersteller : onsemi |
Description: IGBT 50A 600V TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 94 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Supplier Device Package: TO-247-3 IGBT Type: Trench Td (on/off) @ 25°C: 100ns/237ns Switching Energy: 1.5mJ (on), 460µJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 220 nC Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 417 W |
Produkt ist nicht verfügbar |