NGTB25N120FL2WG onsemi
Hersteller: onsemiDescription: IGBT FIELD STOP 1200V 50A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 154 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 87ns/179ns
Switching Energy: 1.95mJ (on), 600µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 178 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 385 W
auf Bestellung 67040 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 70+ | 7.12 EUR |
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Technische Details NGTB25N120FL2WG onsemi
Description: IGBT FIELD STOP 1200V 50A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 154 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A, Supplier Device Package: TO-247-3, IGBT Type: Field Stop, Td (on/off) @ 25°C: 87ns/179ns, Switching Energy: 1.95mJ (on), 600µJ (off), Test Condition: 600V, 25A, 10Ohm, 15V, Gate Charge: 178 nC, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 385 W.
Weitere Produktangebote NGTB25N120FL2WG nach Preis ab 6.67 EUR bis 11.83 EUR
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NGTB25N120FL2WG | Hersteller : onsemi |
Description: IGBT FIELD STOP 1200V 50A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 154 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 87ns/179ns Switching Energy: 1.95mJ (on), 600µJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 178 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 385 W |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| NGTB25N120FL2WG | Hersteller : onsemi |
IGBTs 1200V/25 FAST IGBT FSII T |
auf Bestellung 197 Stücke: Lieferzeit 10-14 Tag (e) |
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NGTB25N120FL2WG | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube |
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NGTB25N120FL2WG | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 50A 385W 3-Pin(3+Tab) TO-247 Tube |
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NGTB25N120FL2WG | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 50A 385W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NGTB25N120FL2WG | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 192W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 192W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 100A Mounting: THT Gate charge: 178nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NGTB25N120FL2WG | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 192W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 192W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 100A Mounting: THT Gate charge: 178nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal |
Produkt ist nicht verfügbar |