NGTB20N120IHSWG ON Semiconductor
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Technische Details NGTB20N120IHSWG ON Semiconductor
Description: IGBT 1200V 20A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/160ns, Switching Energy: 650µJ (off), Test Condition: 600V, 20A, 10Ohm, 15V, Gate Charge: 155 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 156 W.
Weitere Produktangebote NGTB20N120IHSWG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NGTB20N120IHSWG | Hersteller : ON Semiconductor |
 Trans IGBT Chip N-CH 1200V 40A 156000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NGTB20N120IHSWG | Hersteller : onsemi |
Description: IGBT 1200V 20A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/160ns Switching Energy: 650µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 155 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 156 W |
Produkt ist nicht verfügbar |