Technische Details NE3515S02-A
Description: RF MOSFET GAAS HJ-FET 2V S02, Packaging: Bulk, Package / Case: 4-SMD, Flat Leads, Current Rating (Amps): 88mA, Frequency: 12GHz, Power - Output: 14dBm, Gain: 12.5dB, Technology: GaAs HJ-FET, Noise Figure: 0.3dB, Supplier Device Package: S02, Voltage - Rated: 4 V, Voltage - Test: 2 V, Current - Test: 10 mA.
Weitere Produktangebote NE3515S02-A
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NE3515S02-A | Hersteller : CEL |
![]() Packaging: Bulk Package / Case: 4-SMD, Flat Leads Current Rating (Amps): 88mA Frequency: 12GHz Power - Output: 14dBm Gain: 12.5dB Technology: GaAs HJ-FET Noise Figure: 0.3dB Supplier Device Package: S02 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
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