Technische Details NE3508M04-A
Description: RF MOSFET GAAS HJ-FET 2V 4TSMM, Packaging: Bulk, Package / Case: SOT-343F, Current Rating (Amps): 120mA, Frequency: 2GHz, Power - Output: 18dBm, Gain: 14dB, Technology: GaAs HJ-FET, Noise Figure: 0.45dB, Supplier Device Package: F4TSMM, M04, Voltage - Rated: 4 V, Voltage - Test: 2 V, Current - Test: 10 mA.
Weitere Produktangebote NE3508M04-A
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NE3508M04-A | Hersteller : CEL |
![]() Packaging: Bulk Package / Case: SOT-343F Current Rating (Amps): 120mA Frequency: 2GHz Power - Output: 18dBm Gain: 14dB Technology: GaAs HJ-FET Noise Figure: 0.45dB Supplier Device Package: F4TSMM, M04 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
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