Technische Details NDT451N FAI
Description: MOSFET N-CH 30V 5.5A SOT-223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 5.5A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223-4, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 10 V.
Weitere Produktangebote NDT451N
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| NDT451N | Hersteller : FAIRCHILD |
 SOT-223 |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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| NDT451N | Hersteller : NS |
1996 |
auf Bestellung 2499 Stücke: Lieferzeit 21-28 Tag (e) |
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NDT451N | Hersteller : onsemi |
Description: MOSFET N-CH 30V 5.5A SOT-223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-4 Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 10 V |
Produkt ist nicht verfügbar |
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NDT451N | Hersteller : onsemi |
Description: MOSFET N-CH 30V 5.5A SOT-223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-4 Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 10 V |
Produkt ist nicht verfügbar |