NDT02N60ZT1G ON Semiconductor
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Technische Details NDT02N60ZT1G ON Semiconductor
Description: MOSFET N-CH 600V 300MA SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 700mA, 10V, Power Dissipation (Max): 2W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: SOT-223 (TO-261), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V.
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NDT02N60ZT1G | Hersteller : onsemi |
Description: MOSFET N-CH 600V 300MA SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) Rds On (Max) @ Id, Vgs: 8Ohm @ 700mA, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: SOT-223 (TO-261) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
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