NDSH30120C-F155 onsemi
Hersteller: onsemi
Description: SIC DIODE GEN2.0 1200V TO247-2L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1961pF @ 1V, 100kHz
Current - Average Rectified (Io): 38A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: SIC DIODE GEN2.0 1200V TO247-2L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1961pF @ 1V, 100kHz
Current - Average Rectified (Io): 38A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 9450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 18.73 EUR |
10+ | 16.92 EUR |
25+ | 16.13 EUR |
100+ | 14 EUR |
450+ | 12.2 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NDSH30120C-F155 onsemi
Description: SIC DIODE GEN2.0 1200V TO247-2L, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1961pF @ 1V, 100kHz, Current - Average Rectified (Io): 38A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
Weitere Produktangebote NDSH30120C-F155 nach Preis ab 10.21 EUR bis 18.85 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NDSH30120C-F155 | Hersteller : onsemi | Schottky Diodes & Rectifiers Silicon Carbide (SiC) Schottky Diode - EliteSiC, 30 A, 1200 V, D3, TO-247-2L Silicon Carbide (SiC) Schottky Diode - EliteSiC, 30 A, 1200 V, D3, TO-247-2L |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
|