NDSH10120C-F155 onsemi
Hersteller: onsemiDescription: SIC DIODE GEN2.0 1200V TO247-2L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 680pF @ 1V, 100kHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 9.17 EUR |
| 10+ | 8.22 EUR |
| 25+ | 7.77 EUR |
| 100+ | 6.74 EUR |
| 450+ | 5.74 EUR |
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Technische Details NDSH10120C-F155 onsemi
Description: SIC DIODE GEN2.0 1200V TO247-2L, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 680pF @ 1V, 100kHz, Current - Average Rectified (Io): 12A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
Weitere Produktangebote NDSH10120C-F155 nach Preis ab 4.49 EUR bis 9.2 EUR
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NDSH10120C-F155 | Hersteller : onsemi |
Schottky Diodes & Rectifiers Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L |
auf Bestellung 446 Stücke: Lieferzeit 10-14 Tag (e) |
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