Technische Details NDS8958 FAI
Description: MOSFET N/P-CH 30V 5.3A/4A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.3A, 4A, Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V, Rds On (Max) @ Id, Vgs: 35mOhm @ 5.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote NDS8958
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| NDS8958 | Hersteller : FAI |
 SO-8 |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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| NDS8958 | Hersteller : Fairchild |
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auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) |
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| NDS8958 | Hersteller : FAIRCHILD |
09+ |
auf Bestellung 318 Stücke: Lieferzeit 21-28 Tag (e) |
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| NDS8958 | Hersteller : FAIRCHILD |
SO-8 |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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| NDS8958 | Hersteller : NS |
09+ SOP8 |
auf Bestellung 1022 Stücke: Lieferzeit 21-28 Tag (e) |
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NDS8958 | Hersteller : ON Semiconductor |
Trans MOSFET N/P-CH 30V 5.3A/4A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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NDS8958 | Hersteller : onsemi |
Description: MOSFET N/P-CH 30V 5.3A/4A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A, 4A Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V Rds On (Max) @ Id, Vgs: 35mOhm @ 5.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
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NDS8958 | Hersteller : onsemi |
Description: MOSFET N/P-CH 30V 5.3A/4A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A, 4A Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V Rds On (Max) @ Id, Vgs: 35mOhm @ 5.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |