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NDBA100N10BT4H onsemi
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Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 50A, 15V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 50 V
auf Bestellung 8765 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
310+ | 1.6 EUR |
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Technische Details NDBA100N10BT4H onsemi
Description: MOSFET N-CH 100V 100A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 6.9mOhm @ 50A, 15V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 50 V.
Weitere Produktangebote NDBA100N10BT4H
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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NDBA100N10BT4H | Hersteller : ONSEMI |
![]() tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: YES usEccn: TBC SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 8765 Stücke: Lieferzeit 14-21 Tag (e) |
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NDBA100N10BT4H | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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NDBA100N10BT4H | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 50A, 15V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 50 V |
Produkt ist nicht verfügbar |
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NDBA100N10BT4H | Hersteller : onsemi |
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Produkt ist nicht verfügbar |