NCV8440ASTT3G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 59V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.69W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 100µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 59 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 35 V
Description: MOSFET N-CH 59V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.69W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 100µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 59 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 35 V
auf Bestellung 3803 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.8 EUR |
12+ | 1.47 EUR |
100+ | 1.15 EUR |
500+ | 0.97 EUR |
1000+ | 0.79 EUR |
2000+ | 0.75 EUR |
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Technische Details NCV8440ASTT3G onsemi
Description: MOSFET N-CH 59V 2.6A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 2.6A, 10V, Power Dissipation (Max): 1.69W (Ta), Vgs(th) (Max) @ Id: 1.9V @ 100µA, Supplier Device Package: SOT-223 (TO-261), Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 59 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 35 V.
Weitere Produktangebote NCV8440ASTT3G nach Preis ab 0.72 EUR bis 1.83 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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NCV8440ASTT3G | Hersteller : onsemi | MOSFET 2.6A, 52V N-CH, CLAM |
auf Bestellung 5160 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV8440ASTT3G | Hersteller : ON Semiconductor |
auf Bestellung 3986 Stücke: Lieferzeit 21-28 Tag (e) |
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NCV8440ASTT3G | Hersteller : ON Semiconductor | Trans MOSFET N-CH 59V 2.6A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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NCV8440ASTT3G | Hersteller : ON Semiconductor | Trans MOSFET N-CH 59V 2.6A Automotive 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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NCV8440ASTT3G | Hersteller : onsemi |
Description: MOSFET N-CH 59V 2.6A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.6A, 10V Power Dissipation (Max): 1.69W (Ta) Vgs(th) (Max) @ Id: 1.9V @ 100µA Supplier Device Package: SOT-223 (TO-261) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 59 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 35 V |
Produkt ist nicht verfügbar |