Technische Details MWI50-12E7 ABB
Description: IGBT MODULE 1200V 90A 350W E2, Packaging: Box, Package / Case: E2, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: E2, IGBT Type: NPT, Current - Collector (Ic) (Max): 90 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 350 W, Current - Collector Cutoff (Max): 800 µA, Input Capacitance (Cies) @ Vce: 3.8 nF @ 25 V.
Weitere Produktangebote MWI50-12E7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| MWI50-12E7 | Hersteller : IXYS |
 90A/1200V/MOSFET |
auf Bestellung 60 Stücke: Lieferzeit 21-28 Tag (e) |
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| MWI50-12E7 | Hersteller : IXYS |
MODULE |
auf Bestellung 259 Stücke: Lieferzeit 21-28 Tag (e) |
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| MWI50-12E7 | Hersteller : IXYS |
Description: IGBT MODULE 1200V 90A 350W E2 Packaging: Box Package / Case: E2 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A NTC Thermistor: No Supplier Device Package: E2 IGBT Type: NPT Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 350 W Current - Collector Cutoff (Max): 800 µA Input Capacitance (Cies) @ Vce: 3.8 nF @ 25 V |
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