![MVGSF1N03LT1G MVGSF1N03LT1G](https://www.mouser.com/images/mouserelectronics/lrg/SOT_23_3_t.jpg)
auf Bestellung 22000 Stücke:
Lieferzeit 353-357 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 1.14 EUR |
10+ | 1.01 EUR |
100+ | 0.77 EUR |
500+ | 0.61 EUR |
1000+ | 0.49 EUR |
3000+ | 0.44 EUR |
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Technische Details MVGSF1N03LT1G onsemi
Description: MOSFET N-CH 30V 1.6A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 1.2A, 10V, Power Dissipation (Max): 420mW (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 5 V.
Weitere Produktangebote MVGSF1N03LT1G
Foto | Bezeichnung | Hersteller | Beschreibung |
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MVGSF1N03LT1G | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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MVGSF1N03LT1G | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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MVGSF1N03LT1G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 1.2A, 10V Power Dissipation (Max): 420mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 5 V |
Produkt ist nicht verfügbar |
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MVGSF1N03LT1G | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 1.2A, 10V Power Dissipation (Max): 420mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 5 V |
Produkt ist nicht verfügbar |