![MUN5316DW1T1G MUN5316DW1T1G](https://www.mouser.com/images/onsemiconductor/lrg/sc706.jpg)
auf Bestellung 6275 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 0.49 EUR |
10+ | 0.33 EUR |
100+ | 0.14 EUR |
1000+ | 0.097 EUR |
3000+ | 0.076 EUR |
9000+ | 0.062 EUR |
24000+ | 0.058 EUR |
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Technische Details MUN5316DW1T1G onsemi
Description: TRANS PREBIAS 1NPN 1PNP 50V SC88, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V, Resistor - Base (R1): 4.7kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363, Part Status: Active.
Weitere Produktangebote MUN5316DW1T1G nach Preis ab 0.096 EUR bis 0.49 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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MUN5316DW1T1G | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
auf Bestellung 3230 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN5316DW1T1G | Hersteller : ON Semiconductor |
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auf Bestellung 502 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5316DW1T1G | Hersteller : ON Semiconductor |
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auf Bestellung 502 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5316DW1T1G | Hersteller : ON |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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MUN5316DW1T1G | Hersteller : ON Semiconductor |
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auf Bestellung 12087 Stücke: Lieferzeit 21-28 Tag (e) |
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MUN5316DW1T1G | Hersteller : ONSEMI |
![]() tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 691808 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5316DW1T1G | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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MUN5316DW1T1G | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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MUN5316DW1T1G | Hersteller : ONSEMI |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Current gain: 160...350 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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MUN5316DW1T1G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
Produkt ist nicht verfügbar |
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MUN5316DW1T1G | Hersteller : ONSEMI |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Current gain: 160...350 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ |
Produkt ist nicht verfügbar |