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MUN5312DW1T1G ON Semiconductor
auf Bestellung 105000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.066 EUR |
9000+ | 0.053 EUR |
24000+ | 0.048 EUR |
45000+ | 0.041 EUR |
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Technische Details MUN5312DW1T1G ON Semiconductor
Description: TRANS PREBIAS NPN/PNP SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363, Part Status: Active.
Weitere Produktangebote MUN5312DW1T1G nach Preis ab 0.038 EUR bis 0.53 EUR
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MUN5312DW1T1G | Hersteller : ON Semiconductor |
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auf Bestellung 105000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5312DW1T1G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN5312DW1T1G | Hersteller : ON Semiconductor |
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auf Bestellung 29194 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5312DW1T1G | Hersteller : ONSEMI |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Current gain: 100 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Anzahl je Verpackung: 5 Stücke |
auf Bestellung 375 Stücke: Lieferzeit 7-14 Tag (e) |
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MUN5312DW1T1G | Hersteller : ONSEMI |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Current gain: 100 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
auf Bestellung 375 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5312DW1T1G | Hersteller : ON Semiconductor |
![]() |
auf Bestellung 29194 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5312DW1T1G | Hersteller : onsemi |
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auf Bestellung 15391 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN5312DW1T1G | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
auf Bestellung 32820 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN5312DW1T1G | Hersteller : ON Semiconductor |
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auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5312DW1T1G | Hersteller : ON-Semicoductor |
![]() Anzahl je Verpackung: 500 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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MUN5312DW1T1G | Hersteller : ON Semiconductor |
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