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MTB50P03HDLG


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Technische Details MTB50P03HDLG

Description: MOSFET P-CH 30V 50A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 5V, Power Dissipation (Max): 2.5W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V.

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MTB50P03HDLG MTB50P03HDLG Hersteller : ON Semiconductor mtb50p03hdl-d.pdf Trans MOSFET P-CH 30V 50A 3-Pin(2+Tab) D2PAK Tube
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MTB50P03HDLG MTB50P03HDLG Hersteller : onsemi MTB50P03HDL.pdf Description: MOSFET P-CH 30V 50A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 5V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Produkt ist nicht verfügbar
MTB50P03HDLG MTB50P03HDLG Hersteller : onsemi MTB50P03HDL_D-2316247.pdf MOSFET PFET 30V 50A
Produkt ist nicht verfügbar