auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 35.18 EUR |
| 10+ | 32.77 EUR |
| 25+ | 32.4 EUR |
| 50+ | 31.61 EUR |
| 100+ | 27.74 EUR |
| 250+ | 26.8 EUR |
| 500+ | 26.08 EUR |
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Technische Details MT53E1G16D1ZW-046 AIT:C Micron
Description: IC DRAM 16GBIT PAR 200TFBGA, Packaging: Tray, Package / Case: 200-TFBGA, Mounting Type: Surface Mount, Memory Size: 16Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 95°C (TC), Voltage - Supply: 1.06V ~ 1.17V, Technology: SDRAM - Mobile LPDDR4X, Clock Frequency: 2.133 GHz, Memory Format: DRAM, Supplier Device Package: 200-TFBGA (10x14.5), Grade: Automotive, Write Cycle Time - Word, Page: 18ns, Memory Interface: Parallel, Access Time: 3.5 ns, Memory Organization: 1G x 16, Qualification: AEC-Q100.
Weitere Produktangebote MT53E1G16D1ZW-046 AIT:C
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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MT53E1G16D1ZW-046 AIT:C | Hersteller : Micron Technology Inc. |
Description: IC DRAM 16GBIT PAR 200TFBGA Packaging: Tray Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 16Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 1G x 16 Qualification: AEC-Q100 |
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