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MT3S113TU,LF

MT3S113TU,LF Toshiba Semiconductor and Storage

MT3S113TU_datasheet_en_20140301.pdf?did=2086&prodName=MT3S113TU Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 5.3V 11.2GHZ UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 900mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 11.2GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: UFM
auf Bestellung 2502 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.07 EUR
19+ 0.95 EUR
25+ 0.85 EUR
100+ 0.75 EUR
250+ 0.65 EUR
500+ 0.58 EUR
1000+ 0.46 EUR
Mindestbestellmenge: 17
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Technische Details MT3S113TU,LF Toshiba Semiconductor and Storage

Description: RF TRANS NPN 5.3V 11.2GHZ UFM, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 12.5dB, Power - Max: 900mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 5.3V, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V, Frequency - Transition: 11.2GHz, Noise Figure (dB Typ @ f): 1.45dB @ 1GHz, Supplier Device Package: UFM.

Weitere Produktangebote MT3S113TU,LF nach Preis ab 0.41 EUR bis 1.11 EUR

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MT3S113TU,LF MT3S113TU,LF Hersteller : Toshiba MT3S113TU_datasheet_en_20140301-1316018.pdf RF Bipolar Transistors RF Bipolar Transistor .1A 900mW
auf Bestellung 2676 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.11 EUR
10+ 1 EUR
100+ 0.68 EUR
500+ 0.57 EUR
1000+ 0.48 EUR
3000+ 0.44 EUR
6000+ 0.41 EUR
Mindestbestellmenge: 3
MT3S113TU,LF MT3S113TU,LF Hersteller : Toshiba Semiconductor and Storage MT3S113TU_datasheet_en_20140301.pdf?did=2086&prodName=MT3S113TU Description: RF TRANS NPN 5.3V 11.2GHZ UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 900mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 11.2GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: UFM
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