MSS1P4HM3/89A
Hersteller: auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details MSS1P4HM3/89A
Description: DIODE SCHOTTKY 40V 1A MICROSMP, Packaging: Tape & Reel (TR), Package / Case: DO-219AD, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 50pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-219AD (MicroSMP), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A, Current - Reverse Leakage @ Vr: 200 µA @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote MSS1P4HM3/89A
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt |
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MSS1P4HM3/89A | Hersteller : Vishay |
Diode Schottky 40V 1A Automotive 2-Pin Micro SMP T/R |
Produkt ist nicht verfügbar |
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MSS1P4HM3/89A | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 1A MICROSMP Packaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |