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MSJW20N65A-BP

MSJW20N65A-BP Micro Commercial Co

MSJW20N65A(TO-247).pdf Hersteller: Micro Commercial Co
Description: MOSFET N-CH TO247
Packaging: Tube
Part Status: Active
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 100 V
Power Dissipation (Max): 250W (Tj)
auf Bestellung 5395 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.49 EUR
10+ 6.36 EUR
100+ 4.58 EUR
500+ 3.82 EUR
1000+ 3.67 EUR
Mindestbestellmenge: 2
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Technische Details MSJW20N65A-BP Micro Commercial Co

Description: MOSFET N-CH TO247, Packaging: Tube, Part Status: Active, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V, Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 100 V, Power Dissipation (Max): 250W (Tj).

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MSJW20N65A-BP MSJW20N65A-BP Hersteller : Micro Commercial Components (MCC) MSJW20N65A_TO_247_-3132491.pdf MOSFETs N-CHANNEL MOSFET,TO-247
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