Technische Details MSCSM70VR1M19C1AG Microchip Technology
Description: SIC 2N-CH 700V 124A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 365W (Tc), Drain to Source Voltage (Vdss): 700V, Current - Continuous Drain (Id) @ 25°C: 124A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V, Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V, Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V, Vgs(th) (Max) @ Id: 2.4V @ 4mA.
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MSCSM70VR1M19C1AG | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 365W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA |
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