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MSCSM170TLM23C3AG Microchip Technology
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Description: SIC 4N-CH 1700V 124A SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Three Level Inverter)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 602W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 5mA
Supplier Device Package: SP3F
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Technische Details MSCSM170TLM23C3AG Microchip Technology
Description: SIC 4N-CH 1700V 124A SP3F, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Three Level Inverter), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 602W (Tc), Drain to Source Voltage (Vdss): 1700V (1.7kV), Current - Continuous Drain (Id) @ 25°C: 124A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V, Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V, Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V, Vgs(th) (Max) @ Id: 3.2V @ 5mA, Supplier Device Package: SP3F.
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MSCSM170TLM23C3AG | Hersteller : Microchip Technology |
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